Prime Highlights-
- Rapidus and HCLTech open two joint development centers in India to speed up next-generation semiconductor development and chip design work.
- HCLTech will supply photomask design and PDK development technologies while training chip design experts to meet Rapidus future talent needs.
Key Facts-
- Rapidus plans to release its PDKs in fiscal 2026 with HCLTech taking part in development.
- Rapidus targets 2 nanometer chip mass production at its Chitose plant in fiscal 2027 using IBM technology.
Background-
Japanese chipmaker Rapidus has teamed up with India’s HCL Technologies, known as HCLTech, to speed up the development of next-generation semiconductors.
The two companies have jointly set up two development centers in India, and both centers started full operations as soon as the announcement came.
Through these facilities, HCLTech will provide the Tokyo-based chipmaker with a wide range of technologies, including photomask design and the development of process design kits, or PDKs, which chip designers need to create their products.
The Indian IT major will also train chip design experts, which helps Rapidus prepare for its future need for skilled professionals.
Rapidus plans to release its PDKs in fiscal 2026, and HCLTech will take part in that development work.
The tie-up brings India’s strong engineering talent into the chipmaker’s development plans and gives HCLTech a hands-on role in advanced semiconductor work.
IBM Japan has also opened a business office in Chitose, Hokkaido, to support its semiconductor-related clients, including Rapidus.
Using IBM technology, Rapidus aims to start mass production of semiconductors with a circuit line width of 2 nanometers at its Chitose plant in fiscal 2027.
Together, the new centers and the Hokkaido office create a wider support network around Rapidus as it moves toward its production goal.
Chitose also hosts bases of many other semiconductor-related companies, which adds strength to the growing chip cluster in the region and offers Rapidus a ready industry base.